Phase change energy storage materials ppt

Are phase change materials suitable for thermal energy storage?

Phase change materials (PCMs) having a large latent heat during solid-liquid phase transition are promising for thermal energy storage applications. However, the relatively low thermal conductivity of the majority of promising PCMs (<10 W/ (m ⋅ K)) limits the power density and overall storage efficiency.

Do phase change materials store information in amorphous and crystalline phases?

Phase change materials store information in their amorphous and crystalline phases, which can be reversibly switched by the application of an external voltage. In this article, we describe the properties of phase change materials and their application to phase change memory (PCM).

How does a PCM control the temperature of phase transition?

By controlling the temperature of phase transition, thermal energy can be stored in or released from the PCM efficiently. Figure 1 B is a schematic of a PCM storing heat from a heat source and transferring heat to a heat sink.

How do phase change materials work?

Phase change materials exist in an amorphous and one or sometimes several crystalline phases, and they can be rapidly and repeatedly switched between these phases. The switching is typically induced by heating through optical pulses or elec-trical (Joule) heating.

Why do phase change materials have good properties as P-type TES?

Phase change materials have good properties as p -type TEs because they have similar chemical compositions compared to traditional telluride-based TE mate-rials, along with low thermal conductivity and relatively high electrical conductivity, which improves ZT . Chalcogenide-based phase change materials have been shown to exhibit

How do phase change materials affect the performance of PCM cells?

The functionality of the PCM cell is strongly infl uenced by the choice of the phase change material, and large research efforts are devoted to optimizing phase change materials for spe-cifi c applications with variable requirements for memory functionality such as switching speed, data retention, endurance, and switching